Bias- and Temperature-Dependent Noise Measurements to Investigate Carrier Transport at the Tellurium Interface (POSTECH)
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Quick Summary
A new technical paper, “Revealing and Engineering Contact-Origin Noise in Ultrathin Tellurium Transistors,” was published by researchers at Pohang University of Science and Technology. Abstract “Tellurium (Te) has emerged as a promising p-type semiconductor for ultrathin electronics owing to its strong air stability, excellent hole transport, narrow bandgap, and BEOL-integration compatibility. However, when the Te... » read more The post Bias- and Temperature-Dependent Noise Measurements to Investigate Carrier Transport at the Tellurium Interface (POSTECH) appeared first on Semiconductor Engineering.