Identifying Read Disturbance Threshold of DRAM Chips (ETH Zurich, Rutgers)
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Quick Summary
A new technical paper, “DiscoRD: An Experimental Methodology for Quickly Discovering the Reliable Read Disturbance Threshold of Real DRAM Chips,” was published by ETH Zurich and Rutgers University. Abstract “State-of-the-art DRAM read disturbance mitigations rely on the read disturbance threshold (RDT) (e.g., the number of aggressor row activations needed to induce the first read disturbance... » read more The post Identifying Read Disturbance Threshold of DRAM Chips (ETH Zurich, Rutgers) appeared first on Semiconductor Engineering.